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Volumn 53, Issue 5, 2013, Pages 701-705

Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPING; ALGAINP LEDS; CENTER WAVELENGTH; JUNCTION TEMPERATURES; LIGHT OUTPUT; PEAK WAVELENGTH; PEAK WAVELENGTH SHIFT; PRACTICAL METHOD;

EID: 84876412405     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2013.01.003     Document Type: Article
Times cited : (40)

References (17)
  • 2
    • 70350090672 scopus 로고    scopus 로고
    • Spectral shape and broadening of emission from AlGaInP light-emitting diodes
    • N.C. Chen, W.C. Lien, Y.K. Yang, C. Shen, Y.S. Wang, and J.F. Chen Spectral shape and broadening of emission from AlGaInP light-emitting diodes J Appl Phys 106 2009 074514
    • (2009) J Appl Phys , vol.106 , pp. 074514
    • Chen, N.C.1    Lien, W.C.2    Yang, Y.K.3    Shen, C.4    Wang, Y.S.5    Chen, J.F.6
  • 3
    • 0013395199 scopus 로고    scopus 로고
    • Effect of indirect minima carrier population on the output characteristics of AlGaInP light-emitting diodes
    • D. Patel, J.M. Pikal, C.S. Menoni, K.J. Thomas, F.A. Kish, and M.R. Hueschen Effect of indirect minima carrier population on the output characteristics of AlGaInP light-emitting diodes Appl Phys Lett 75 1999 3201 3203
    • (1999) Appl Phys Lett , vol.75 , pp. 3201-3203
    • Patel, D.1    Pikal, J.M.2    Menoni, C.S.3    Thomas, K.J.4    Kish, F.A.5    Hueschen, M.R.6
  • 5
    • 1842638575 scopus 로고    scopus 로고
    • A method for projecting useful life of LED lighting systems
    • E. Hong, and N. Narendran A method for projecting useful life of LED lighting systems Proc SPIE 5187 2004 93 99
    • (2004) Proc SPIE , vol.5187 , pp. 93-99
    • Hong, E.1    Narendran, N.2
  • 7
    • 84876409291 scopus 로고    scopus 로고
    • Philips Lumileds Application brief AB33, Philips Lumileds: San Jose, CA
    • Philips Lumileds. LUXEON rebel thermal measurement guidelines, Application brief AB33, Philips Lumileds: San Jose, CA; 2008. < http://www.philipslumileds.com/uploads/10/AB33-pdf >.
    • (2008) LUXEON Rebel Thermal Measurement Guidelines
  • 8
    • 33748486706 scopus 로고    scopus 로고
    • Determination of junction temperature in AlGaInP/GaAs light emitting diodes by self-excited photoluminescence signal
    • N.C. Chen, Y.N. Wang, C.Y. Tseng, and Y.K. Yang Determination of junction temperature in AlGaInP/GaAs light emitting diodes by self-excited photoluminescence signal Appl Phys Lett 89 2006 101114
    • (2006) Appl Phys Lett , vol.89 , pp. 101114
    • Chen, N.C.1    Wang, Y.N.2    Tseng, C.Y.3    Yang, Y.K.4
  • 9
    • 67649986202 scopus 로고    scopus 로고
    • Temperature dependences of photoluminescence and electroluminescence spectra in light-emitting diodes
    • L. Li, P. Li, Y. Wen, J. Wen, and Y. Zhu Temperature dependences of photoluminescence and electroluminescence spectra in light-emitting diodes Appl Phys Lett 94 2009 261103
    • (2009) Appl Phys Lett , vol.94 , pp. 261103
    • Li, L.1    Li, P.2    Wen, Y.3    Wen, J.4    Zhu, Y.5
  • 10
    • 24644450315 scopus 로고    scopus 로고
    • Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics
    • H.Y. Ryu, K.H. Ha, J.H. Chae, O.H. Nam, and Y.J. Park Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics Appl Phys Lett 87 2005 093506
    • (2005) Appl Phys Lett , vol.87 , pp. 093506
    • Ryu, H.Y.1    Ha, K.H.2    Chae, J.H.3    Nam, O.H.4    Park, Y.J.5
  • 11
    • 7044233214 scopus 로고    scopus 로고
    • Junction-temperature measurement in GaN ultraviolet light-emitting diodes using forward voltage method
    • Y. Xi, and E.F. Schubert Junction-temperature measurement in GaN ultraviolet light-emitting diodes using forward voltage method Appl Phys Lett 85 2004 2163
    • (2004) Appl Phys Lett , vol.85 , pp. 2163
    • Xi, Y.1    Schubert, E.F.2
  • 12
    • 49949133713 scopus 로고
    • Temperature dependence of the energy gap in semiconductors
    • Y.P. Varshni Temperature dependence of the energy gap in semiconductors Physica 34 1967 149 154
    • (1967) Physica , vol.34 , pp. 149-154
    • Varshni, Y.P.1
  • 13
    • 0035356466 scopus 로고    scopus 로고
    • Band parameters for III-V compound semiconductors and their alloys
    • I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan Band parameters for III-V compound semiconductors and their alloys J Appl Phys 89 2001 5815 5875
    • (2001) J Appl Phys , vol.89 , pp. 5815-5875
    • Vurgaftman, I.1    Meyer, J.R.2    Ram-Mohan, L.R.3
  • 16
    • 0033720833 scopus 로고    scopus 로고
    • Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes
    • M.F. Huang, P.H. Liu, and J.S. Liu Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes Proc SPIE 4078 2000 595 602
    • (2000) Proc SPIE , vol.4078 , pp. 595-602
    • Huang, M.F.1    Liu, P.H.2    Liu, J.S.3
  • 17
    • 84876420191 scopus 로고    scopus 로고
    • Agilent Technologies LED thermal testing
    • Agilent Technologies. Application brief A05, LED thermal testing.
    • Application Brief A05


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.