Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method

Journal of Crystal Growth

Volumn 372, Issue , 2013, Pages 95-99

  Miyagawa, Chihiro ^a,b   Kobayashi, Takumi ^a   Taishi, Toshinori ^b   Hoshikawa, Keigo ^b  

^a Fujikoshi Machinery Corporation   (Japan)

^b SHINSHU UNIVERSITY   (Japan)

Author keywords

A1. Stresses A2. Bridgman technique A2. Growth from melt A2. Single crystal growth B1. Sapphire

Indexed keywords

AS-GROWN CRYSTAL; BRIDGMAN TECHNIQUES; CRUCIBLE MATERIALS; DIMENSIONAL VARIATIONS; LINEAR THERMAL EXPANSIONS; SAPPHIRE CRYSTAL; SAPPHIRE SINGLE CRYSTAL; VERTICAL BRIDGMAN METHOD;

CRACKS; CRUCIBLES; CRYSTAL GROWTH; SINGLE CRYSTALS;

SAPPHIRE;

EID: 84876275640     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.03.006     Document Type: Article

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