Pore formation and removal in solution-processed amorphous arsenic sulfide films

Journal of Non-Crystalline Solids

Volumn 369, Issue , 2013, Pages 11-16

  Zha, Yunlai ^a   Fingerman, Samuel ^b   Cantrell, Stanley J ^c   Arnold, Craig B ^a  

^a Princeton University   (United States)

^b UNIVERSITY OF MASSACHUSETTS LOWELL   (United States)

^c NORTH CAROLINA A AND T STATE UNIVERSITY   (United States)

Author keywords

Chalcogenides; Porous materials; Solution process

Indexed keywords

ARSENIC SULFIDE; BAKING TEMPERATURE; COALESCENCE MECHANISMS; ETHYLENE DIAMINE; HOMOGENEOUS FILMS; SOLUTION METHODS; SOLUTION PROCESS; SOLUTION-PROCESSED;

CHALCOGENIDES; COALESCENCE; NANOPORES; PORE SIZE; POROUS MATERIALS;

AMORPHOUS FILMS;

EID: 84876135303     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2013.03.014     Document Type: Article

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