High-speed oxide confined 850-nm VCSELs operating error-free at 40 Gb/s up to 85°C

IEEE Photonics Technology Letters

Volumn 25, Issue 8, 2013, Pages 768-771

  Westbergh, Petter ^a   Safaisini, Rashid ^a   Haglund, Erik ^a   Gustavsson, Johan S ^a   Larsson, Anders ^a   Geen, Matthew ^b   Lawrence, Russell ^b   Joel, Andrew ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b IQE INC   (United States)

Author keywords

High speed modulation; optical interconnects; semiconductor lasers; vertical cavity surface emitting laser (VCSEL)

Indexed keywords

HIGH-SPEED MODULATION; MODULATION BANDWIDTH; OXIDE APERTURE; OXIDE CONFINED; PERFORMANCE CHARACTERISTICS; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; VERTICAL-CAVITY SURFACE EMITTING LASER;

BANDWIDTH; DATA COMMUNICATION SYSTEMS; MODULATION; OPTICAL INTERCONNECTS; SEMICONDUCTOR LASERS; SURFACE EMITTING LASERS;

TRANSCEIVERS;

EID: 84875857109     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2013.2250946     Document Type: Article

References (12)

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