Design of gaas solar cells operating close to the shockley-queisser limit

IEEE Journal of Photovoltaics

Volumn 3, Issue 2, 2013, Pages 737-744

  Wang, Xufeng ^a   Khan, Mohammad Ryyan ^a   Gray, Jeffery L ^a   Alam, Muhammad Ashraful ^a   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Gallium arsenide; photovoltaic cells; solar energy; thin film devices

Indexed keywords

EFFICIENCY LIMITS; GAAS SOLAR CELLS; PHOTON RECYCLING; SHOCKLEY-QUEISSER LIMITS; THEORETICAL LIMITS; THERMODYNAMIC LIMITS; THIN-FILM GAAS SOLAR CELLS; TRANSPORT SIMULATION;

GALLIUM ARSENIDE; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM; SOLAR ENERGY; THIN FILM DEVICES;

SOLAR CELLS;

EID: 84875620045     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2241594     Document Type: Article

References (30)

1. B. M. Kayes et al., "27.6% conversion efficiency, a new record for singlejunction solar cells under 1 sun illumination," in Proc. 37th IEEE Photovoltaic Spec. Conf., Jun. 2011, pp. 000004-000008.
2. M. A.Green,K. Emery,Y.Hishikawa,W.Warta, and E. D.Dunlop, "Solar cell efficiency tables (Version 39)," Progr. Photovoltaics, vol. 20, no. 1, pp. 12-20, 2012.
3. G. J. Bauhuis, P. Mulder, E. J. Haverkamp, J. C. C. M. Huijben, and J. J. Schermer, "26.1% thin-film GaAs solar cell using epitaxial lift-off," Solar Energy Mater. Solar Cells, vol. 93, pp. 1488-1491, 2009.
4. O. D. Miller, E. Yablonovitch, and S. R. Kurtz, "Strong internal and external luminescence as solar cells approach the Shockley-Queisser limit," IEEE J. Photovoltaics, vol. 2, no. 3, pp. 303-311, Jul. 2012.
5. H. Atwater, "Paths to high efficiency low-cost photovoltaics," in Proc. 37th IEEE Photovoltaic Spec. Conf., Jun. 2011, pp. 000001-000003.
6. I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, "Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures," Appl. Phys. Lett., vol. 62, no. 2, p. 131, 1993.
7. J. E. Parrott, "Radiative recombination and photon recycling in photovoltaic solar cells," Solar Energy Mater. Solar Cells, vol. 30, pp. 221-231, 1993. (Pubitemid 23704899)
8. F. Stern and J. M. Woodall, "Photon recycling in semiconductor lasers," J. Appl. Phys., vol. 45, no. 9, pp. 3904-3906, 1974.
9. G. Lush and M. Lundstrom, "Thin film approaches for high efficiency III-V cells," Solar Cells, vol. 30, pp. 337-344, 1991. (Pubitemid 21665106)
10. A. Mart́?, J. L. Balenzategui, and R. F. Reyna, "Photon recycling and Shockley's diode equation," J. Appl. Phys., vol. 82, no. 8, p. 4067, 1997.
11. J. Gray, "The physics of solar cells," in Handbook of Photovoltaic Science and Engineering. New York, NY, USA: Wiley, 2011.
12. W. Shockley and H. J. Queisser, "Detailed balance limit of p-n junction solar cells," J. Appl. Phys., vol. 32, no. 510, p. 510, 1961.
13. E. Yablonovitch, "Statistical ray optics," J. Opt. Soc. Amer., vol. 72, no. 899, pp. 899-907, 1982.
14. P. Asbeck, "Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructures," J. Appl. Phys., vol. 48, pp. 820-822, 1977.
15. W. van Roosbroeck andW. Shockley, "Photon-radiative recombination of electrons and holes in germanium," Phys. Rev., vol. 94, pp. 1558-1560, 1954.
16. F. Urbach, "The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids," Phys. Rev., vol. 92, p. 1324, 1953.
17. G. B. Lush, "Recombination and absorption in n-type gallium arsenide," Ph.D. dissertation, Purdue Univ., West Lafayette, IN [Online]. Available at http://docs.lib.purdue.edu/dissertations/AAI9301343/, 1992.
18. S. M. Durbin, J. L. Gray, R. K. Ahrenkiel, and D. H. Levi, "Numerical modeling of the influence of photon recycling on lifetime measurements," in Proc. 23rd IEEE Photovoltaic Spec. Conf., 1993, pp. 628-632.
19. H. C. Casey, Jr., and F. Stern, "Concentration-dependent absorption and spontaneous emission of heavily doped GaAs," J. Appl. Phys., vol. 47, no. 2, pp. 631-643, 1976.
20. V. P.Varshni, "Band-to-band radiative recombination in groups IV,VI, and III-V semiconductors," Phys. Status Solidi, vol. 19, no. 2, pp. 459-514, 1967.
21. J. L. Gray, X. Wang, and X. Sun ADEPT 2.0 (2013). [Online]. Available http://nanohub.org/resources/adeptnpt.
22. A. W. Smith andA. Rohatgi, "Ray-tracing analysis of the inverted pyramid texturing geometry for high efficiency silicon solar cells," Solar Energy Mater. Solar Cells, vol. 29, no. 1, pp. 37-49, 1993. (Pubitemid 23611786)
23. P. D. DeMoulin, S. P. Tobin, M. S. Lundstrom, M. S. Carpenter, and M. R. Melloch, "Influence of perimeter recombination on high-efficiency GaAs p/n heteroface solar cells," IEEE Electron Device Lett., vol. 9, no. 8, pp. 368-370, Aug. 1988.
24. T. B. Stellwag, P. E. Dodd, M. S. Carpenter, M. S. Lundstrom, R. F. Pierret, M. R. Melloch, E. Yablonovitch, and T. J. Gmitter, "Effects of perimeter recombination onGaAs-based solar cells," in Proc. 21st IEEE Eur. Photovoltaic Solar Energy Conf. Exhib., 1990, pp. 442-447. (Pubitemid 21646570)
25. T. B. Stellwag, M. R. Melloch, M. S. Lundstrom, M. S. Carpenter, and R. F. Pierret, "Orientation-dependent perimeter recombination in GaAs diodes," Appl. Phys. Lett., vol. 56, pp. 1658-1660, 1990.
26. P. E. Dodd, T. B. Stellwag, M. R. Melloch, and M. S. Lundstrom, "Surface and perimeter recombination in GaAs diodes: An experimental and theoretical investigation," IEEE Trans. Electron Devices, vol. 38, no. 6, pp. 1253-1261, Jun. 1991.
27. R. T. Ross, "Some thermodynamics of photochemical systems," J. Chem. Phys., vol. 46, pp. 4590-4593, 1967.
28. L.Wen, L. Yueqiang, C. Jianjun, C. Yanling,W. Xiaodong, and Y. Fuhua, "Optimization of grid design for solar cells," J. Semicond., vol. 31, p. 014006, 2010.
29. L. S. Mattos, S. R. Scully, M. Syfu, E. Olson, L. Yang, C. Ling, B. M. Kayes, and G. He, "New module efficiency record: 23.5% under 1-sun illumination using thin-film single-junction GaAs solar cells," in Proc. 38th IEEE Photovoltaic Spec. Conf., 2012, pp. 003187-003190.
30. M. A. Alam and M. R. Khan, "Fundamentals of PV efficiency interpreted by a two-level model," arXiv:1205.6652v1, May 2012.