Stable p- and n-type doping of few-layer graphene/graphite

Carbon

Volumn 57, Issue , 2013, Pages 507-514

  Meng, Xiuqing ^a   Tongay, Sefaattin ^b   Kang, Jun ^c   Chen, Zhanghui ^c   Wu, Fengmin ^a   Li, Shu Shen ^c   Xia, Jian Bai ^c   Li, Jingbo ^a,c   Wu, Junqiao ^b  

^a ZHEJIANG NORMAL UNIVERSITY   (China)

^b University of California Berkeley   (United States)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING EFFECTS; FEW-LAYER GRAPHENE; GRAPHENE SHEETS; GRAPHITIC STRUCTURES; INTERCALATED GRAPHITE; INTERCALATION PROCESS; N- AND P-TYPE DOPING; RAMAN MEASUREMENTS;

GRAPHENE; GRAPHITE; INTERCALATION; INTERCALATION COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE;

SEMICONDUCTOR DOPING;

EID: 84875278556     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2013.02.028     Document Type: Article

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