High quality passivation scheme combined with laser doping from SiN:P and SiN:B layer for silicon solar cell

Energy Procedia

Volumn 27, Issue , 2012, Pages 467-473

  Gall, S ^a   Paviet Salomon, B ^a   Lerat, J ^b   Emeraud, T ^b  

^a CEA INES   (France)

^b PV Business Unit   (Belgium)

Author keywords

Ion implantation; Passivation; Phosphorus; Screen printing; Solar cells; Thermal annealing

Indexed keywords

EID: 84875155668     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.07.095     Document Type: Conference Paper

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