Intrinsic mechanisms of stimulated emission in homoepitaxial GaN

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 516-519

  Kazlauskas, K ^a   Tamulaitis, G ^a   Zukauskas A ^a   Prystawko, P ^b   Leszczynski, M ^b   Suski, T ^b   Perlin, P ^b   Grzegory, I ^b   Porowski, S ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; III-V SEMICONDUCTORS; NITRIDES; STIMULATED EMISSION; WIDE BAND GAP SEMICONDUCTORS;

ELECTRON HOLE PLASMA; ENERGY SPECTRAL; ENHANCED DIFFUSION; INTRINSIC MECHANISMS; OPTICAL STIMULATION; PUMPING INTENSITY; SIMULTANEOUS OBSERVATION; SPATIAL SEPARATION;

GALLIUM NITRIDE;

EID: 84875104947     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390102     Document Type: Conference Paper

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