Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2662-2665

  Halsall, M P ^a   Sherliker, B ^a   Harrison, P ^b   Jovanovic V D ^b   Indjin, D ^b   Ikonic Z ^b   Wang, T ^c   Whitehead, M A ^c   Parbrook, P J ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF LEEDS   (United Kingdom)

^c Engineering and Physical Sciences Research Council UK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER POPULATION; ELECTRONIC RAMAN SCATTERING; FULL WIDTH HALF MAXIMUM; GAN-QUANTUM WELLS; GAN/ALGAN QUANTUM WELLS; INTERSUBBAND TRANSITIONS; MULTIPLE QUANTUM-WELL STRUCTURES; STRONG SCATTERINGS;

NITRIDES; RAMAN SCATTERING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84875088930     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303385     Document Type: Conference Paper

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