Fabrication and modeling of high sensitivity humidity sensors based on doped silicon nanowires

Sensors and Actuators, B: Chemical

Volumn 176, Issue , 2013, Pages 413-419

  Taghinejad, H ^a   Taghinejad, M ^a   Abdolahad, M ^a   Saeidi, A ^a   Mohajerzadeh, S ^a  

^a UNIVERSITY OF TEHRAN   (Iran)

Author keywords

Circuit model; Doping; Humidity sensor; Silicon nanowire; Vapor liquid solid

Indexed keywords

CAPACITIVE SENSORS; CIRCUIT SIMULATION; CIRCUIT THEORY; DOPING (ADDITIVES); HUMIDITY SENSORS; INFRARED SPECTROSCOPY; SILICON;

CAPACITIVE HUMIDITY SENSORS; CIRCUIT MODELING; DOPING EFFECTS; GROWTH PRESSURE; HIGH SENSITIVITY; SILICON NANOWIRES; VAPOR LIQUID SOLIDS; VAPOR-LIQUID-SOLID TECHNIQUES;

NANOWIRES;

EID: 84874989873     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.09.062     Document Type: Article

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