Disorder-controlled electrical properties in the Ho2Sb 1- xBixO2 Systems

Chemistry of Materials

Volumn 25, Issue 5, 2013, Pages 699-703

  Wang, Peng L ^a   Kolodiazhnyi, Taras ^b   Yao, Jinlei ^a,c   Mozharivskyj, Yurij ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c SUZHOU UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Anderson localization; electrical properties; local structural disorder; semiconductors; suboxides

Indexed keywords

ANDERSON LOCALIZATION; EXPERIMENTAL OBSERVATION; PROPERTY MEASUREMENT; SEMICONDUCTOR-TO-METAL TRANSITIONS; SINGLE-CRYSTAL X-RAY DIFFRACTION STUDIES; STRUCTURAL DISORDERS; STRUCTURAL PERTURBATION; SUBOXIDES;

BISMUTH; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION;

ELECTRIC PROPERTIES;

EID: 84874980689     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm3033302     Document Type: Article

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