Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high-power flip-chip LEDs

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 3, 2013, Pages 466-469

  Chernyakov, A E ^a   Bulashevich, K A ^b   Karpov, S Yu ^b   Zakgeim, A L ^a  

^a Russian Academy of Sciences   (Russian Federation)

^b SOFT IMPACT LTD   (Russian Federation)

Author keywords

current crowding; electroluminescence; flip chip LEDs; III nitrides; simulation

Indexed keywords

COMPREHENSIVE ANALYSIS; CURRENT CROWDING; FLIP-CHIP LEDS; HIGH-RESOLUTION MAPPING; III-NITRIDES; INGAN/GAN LIGHTEMITTING DIODES (LEDS); OPTICAL CHARACTERISTICS; SIMULATION;

COMPUTER SIMULATION; FLIP CHIP DEVICES; LIGHT EMITTING DIODES; THREE DIMENSIONAL COMPUTER GRAPHICS;

ELECTROLUMINESCENCE;

EID: 84874821333     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201200658     Document Type: Article

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