Morphological and spatial control of InP growth using closed-space sublimation

Journal of Applied Physics

Volumn 112, Issue 12, 2012, Pages

  Kiriya, Daisuke ^a,b,c   Zheng, Maxwell ^a,b,c   Kapadia, Rehan ^a,b,c   Zhang, Junjun ^a,b,c   Hettick, Mark ^a,b   Yu, Zhibin ^a,b,c   Takei, Kuniharu ^a,b,c   Hank Wang, Hsin Hua ^a   Lobaccaro, Peter ^a,b   Javey, Ali ^a,b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION KINETICS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; SUBLIMATION; THIN FILM SOLAR CELLS;

CLOSED SPACE SUBLIMATION; EPITAXIAL SUBSTRATES; PHOTOLUMINESCENCE MEASUREMENTS; PHOTOVOLTAIC APPLICATIONS; POLYCRYSTALLINE FILM; SELECTIVE NUCLEATION; SEMICONDUCTOR THIN FILMS; SUBSTRATE TEMPERATURE;

SUBSTRATES;

EID: 84874763760     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768836     Document Type: Article

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