Artificially imposed hexagonal ferroelectricity in canted antiferromagnetic YFeO3 epitaxial thin films

Materials Chemistry and Physics

Volumn 138, Issue 2-3, 2013, Pages 929-936

  Ahn, Suk Jin ^a   Lee, Jung Hoon ^a   Jeong, Young Kyu ^a   Na, Eun Hye ^a   Koo, Yang Mo ^a   Jang, Hyun Myung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

ab initio calculations; Ferroelectricity; Magnetic properties; Thin films

Indexed keywords

AB INITIO CALCULATIONS; ANTIFERROMAGNETICS; CENTROSYMMETRIC; COMMON KNOWLEDGE; ELECTRONIC ORIGIN; EPITAXIAL THIN FILMS; FIRST BRILLOUIN ZONE; FIRST-PRINCIPLES CALCULATION; HEXAGONAL FERROELECTRICITIES; HEXAGONAL SYMMETRY; ORTHOFERRITES; ROOM TEMPERATURE; SPACE GROUPS; STRUCTURAL PHASE TRANSITION;

ANTIFERROMAGNETISM; CALCULATIONS; EPITAXIAL GROWTH; MAGNETIC PROPERTIES; THIN FILMS; YTTRIUM OXIDE;

FERROELECTRICITY;

EID: 84874532424     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.12.086     Document Type: Article

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