Effect of doping concentration and substrate temperature on the physical properties of Indium-doped zinc oxide thin films

CCE 2012 - 2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control

Volumn , Issue , 2012, Pages

  Biswal, R R ^a   Maldonado, A ^a   De La L Olvera, M ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

Semiconductor oxides; Thin Films; Ultrasonic Spray Pyrolysis; Zinc oxide

Indexed keywords

ATOMIC CONCENTRATION; EFFECT OF DOPING; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; GRAIN SIZE; INDIUM ACETATE; INDIUM CONCENTRATION; OPTICAL CHARACTERISTICS; POLYCRYSTALLINE; SEMICONDUCTOR OXIDES; STARTING SOLUTIONS; SUBSTRATE TEMPERATURE; ULTRASONIC SPRAY PYROLYSIS; ULTRASONIC SPRAY PYROLYSIS TECHNIQUE; ZINC ACETATE; ZINC OXIDE THIN FILMS; ZNO;

ACETIC ACID; AUTOMATION; CONTROL; ELECTRIC CONDUCTIVITY; ELECTRICAL ENGINEERING; ELECTRON MOBILITY; FILM GROWTH; INDIUM; METHANOL; PROCESS CONTROL; SEMICONDUCTOR DOPING; SPRAY PYROLYSIS; SUBSTRATES; THIN FILMS; ULTRASONIC TESTING; ZINC COMPOUNDS; ZINC OXIDE;

ORGANOMETALLICS;

EID: 84874408587     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEEE.2012.6421147     Document Type: Conference Paper

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