Defect-electron spreading on the TiO2(110) semiconductor surface by water adsorption

Journal of Physical Chemistry Letters

Volumn 4, Issue 4, 2013, Pages 674-679

  Zhang, Zhen ^a   Cao, Ke ^a   Yates, John T ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

Author keywords

electron distribution; electron stimulated desorption; H2O; oxygen vacancy; TiO2

Indexed keywords

DEFECT SITES; DESORPTION YIELD; DISSOCIATIVE ADSORPTION; DONOR AND ACCEPTOR; ELECTRON DISTRIBUTIONS; ELECTRON STIMULATED DESORPTION; LATTICE SITES; OH FORMATION; RE-NEUTRALIZATION; SEMI-CONDUCTOR SURFACES; SUBSURFACE SITES; SURFACE ELECTRON; SURFACE LATTICE; TIO; WATER ADSORPTION;

ADSORPTION; CARRIER CONCENTRATION; DESORPTION; ELECTRON DENSITY MEASUREMENT; ELECTRONS; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; IONS; OXYGEN VACANCIES; PHOTODISSOCIATION; SURFACE CHEMISTRY; TITANIUM DIOXIDE;

SURFACE DEFECTS;

EID: 84874137068     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz400101f     Document Type: Article

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