The effect of Zn vacancies and Ga dopants on the electronic structure of ZnO: Ab initio simulations

IOP Conference Series: Materials Science and Engineering

Volumn 38, Issue 1, 2012, Pages

  Sorokin, Alexandre V ^a   Zhukovskii, Yuri F ^a   Purans, Juris ^a   Kotomin, Eugene A ^a  

^a UNIVERSITY OF LATVIA   (Latvia)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO SIMULATIONS; DIFFERENT SIZES; FIRST PRINCIPLE CALCULATIONS; GA DOPANTS; HEXAGONAL MORPHOLOGY; OPTICAL AND ELECTRONIC PROPERTIES; PRODUCTION OF; SUPER CELL; TRANSPARENT CONDUCTING FILMS; WURTZITE TYPE; ZN VACANCIES; ZNO;

CONDUCTIVE FILMS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; FUNCTIONAL MATERIALS; GALLIUM; NANOTECHNOLOGY; ZINC; ZINC OXIDE; ZINC SULFIDE;

ELECTRONIC PROPERTIES;

EID: 84874093440     PISSN: 17578981     EISSN: 1757899X     Source Type: Conference Proceeding    
DOI: 10.1088/1757-899X/38/1/012015     Document Type: Conference Paper

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