Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensor

Thin Solid Films

Volumn 529, Issue , 2013, Pages 173-176

  Li, Hung Hsien ^a   Yang, Chi En ^b   Kei, Chi Chung ^c   Su, Chung Yi ^d   Dai, Wei Syuan ^a   Tseng, Jung Kuei ^b   Yang, Po Yu ^a   Chou, Jung Chuan ^e   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b ST JOHN'S UNIVERSITY   (Taiwan)

^c INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^e NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Atomic layer deposition (ALD); Electroless metal deposition (EMD); Extended Gate Field Effect Transistors (EGFET); Low temperature; pH sensor; Zinc oxide (ZnO)

Indexed keywords

ELECTROLESS METAL DEPOSITION; EXTENDED GATE FIELD EFFECT TRANSISTOR (EGFET); EXTENDED-GATE FIELD-EFFECT TRANSISTORS; HIGH SURFACE-TO-VOLUME RATIO; LOW TEMPERATURES; NANOWIRE STRUCTURES; OUTPUT VOLTAGES; RELIABILITY AND DURABILITIES; ROOM TEMPERATURE; SENSING AREAS; SILICON NANOWIRES; TIME CHARACTERISTICS; TRANSFER CHARACTERISTICS; ZINC OXIDE (ZNO); ZNO; ZNO FILMS;

ATOMIC LAYER DEPOSITION; NANOWIRES; PH; SENSORS; ZINC OXIDE;

PH SENSORS;

EID: 84873742333     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.05.045     Document Type: Conference Paper

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