Gate-induced superconductivity in layered-material-based electric double layer transistors

Journal of Physics: Conference Series

Volumn 400, Issue PART 2, 2012, Pages

  Ye, J T ^a   Zhang, Y J ^a   Matsuhashi, Y ^a   Craciun, M F ^b   Russo, S ^b   Kasahara, Y ^a   Morpurgo, A F ^c   Iwasa, Y ^d  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c UNIVERSITY OF GENEVA   (Switzerland)

^d RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL MODIFICATION; ELECTROCHEMISTRY; FIELD EFFECT TRANSISTORS; LOW TEMPERATURE EFFECTS; TEMPERATURE;

ATOMICALLY FLAT SURFACE; EFFECTIVE DOPING; ELECTRIC DOUBLE-LAYER TRANSISTORS; LAYERED MATERIAL;

ELECTRIC FIELD EFFECTS;

EID: 84873624667     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/400/2/022139     Document Type: Conference Paper

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