10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2012, Pages 143-146

  Sato, Tomonari ^a   Takeda, Koji ^a   Imai, Hiromitsu ^a   Shinya, Akihiko ^a,b   Nozaki, Kengo ^a,b   Taniyama, Hideaki ^a,b   Hasebe, Koichi ^a   Kobayashi, Wataru ^a   Kakitsuka, Takaaki ^a   Notomi, Masaya ^a,b   Matsuo, Shinji ^a  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Photonic crystals; Photonic integrated circuits; Semiconductor lasers

Indexed keywords

10-GBIT/S; ACTIVE REGIONS; CMOS CHIPS; DIRECT MODULATION; ENERGY COST; INGAALAS; INGAALAS MQW; MULTIPLE-QUANTUM-WELL STRUCTURES; NANOCAVITY LASERS; OPERATING TEMPERATURE; OPTICALLY PUMPED; OUTPUT POWER; PHOTONIC INTEGRATED CIRCUITS; PHOTONIC NETWORK;

CRYSTAL STRUCTURE; INDIUM PHOSPHIDE; LIGHT SOURCES; MODULATION; PHOTONIC CRYSTALS; PUMPING (LASER); SEMICONDUCTOR LASERS;

OPTICALLY PUMPED LASERS;

EID: 84873121929     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2012.6403342     Document Type: Conference Paper

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