The impact of heterojunction formation temperature on obtainable conversion efficiency in n-ZnO/p-Cu2O solar cells

Thin Solid Films

Volumn 528, Issue , 2013, Pages 72-76

  Nishi, Yuki ^a   Miyata, Toshihiro ^a   Minami, Tadatsugu ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Cu2O; Heterojunction; Solar sells; Thin film; ZnO

Indexed keywords

ACTIVE LAYER; AL-DOPED ZNO; DEPLETION LAYER; DEPOSITION TECHNIQUE; EFFICIENCY IMPROVEMENT; FORMATION TEMPERATURE; HETEROJUNCTION SOLAR CELLS; HIGHER EFFICIENCY; LOW DEPOSITION TEMPERATURE; OXIDE SEMICONDUCTOR; P-N HETEROJUNCTIONS; PHOTOVOLTAIC PROPERTY; POTENTIAL BARRIER HEIGHT; ROOM TEMPERATURE; SCHOTTKY BARRIERS; SOLAR SELLS; SURFACE CONDITIONS; ZNO;

CONVERSION EFFICIENCY; SCHOTTKY BARRIER DIODES; SOLAR CELLS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84872961893     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.09.090     Document Type: Conference Paper

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