Unusual photoelectric behaviors of Mo-doped TiO2 multilayer thin films prepared by RF magnetron co-sputtering: Effect of barrier tunneling on internal charge transfer

Applied Physics A: Materials Science and Processing

Volumn 110, Issue 1, 2013, Pages 129-135

  Yan, B X ^a   Luo, S Y ^a,b   Mao, X G ^a   Shen, J ^a   Zhou, Q F ^a  

^a FUDAN UNIVERSITY   (China)

^b GUIZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; CARRIER TRANSPORT CHARACTERISTICS; DEPLETION LAYER; DOPED SAMPLE; DOUBLE LAYER STRUCTURE; HEAVILY DOPED; INTERNAL CHARGE TRANSFER; MO CONCENTRATION; MULTI-LAYER THIN FILM; PHOTOELECTRIC BEHAVIOR; PHOTOELECTRIC PROPERTY; RED-SHIFTED; RF-MAGNETRON CO-SPUTTERING; SCHOTTKY JUNCTIONS; SURFACE LAYERS; THREE-LAYER FILM; TIO; VISIBLE LIGHT;

ATOMIC FORCE MICROSCOPY; CHARGE TRANSFER; ELECTRIC FIELDS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTOELECTRICITY; TITANIUM DIOXIDE; ULTRAVIOLET VISIBLE SPECTROSCOPY; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84872292533     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-012-7433-1     Document Type: Article

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