A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Wu, Shan ^a   Shao, Ming ^b   Burlingame, Quinn ^a   Chen, Xiangzhong ^a   Lin, Minren ^a   Xiao, Kai ^b   Zhang, Q M ^a  

^a The Pennsylvania State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVE COUPLINGS; CHARGE CONCENTRATION; DEFECT MODIFICATION; DIELECTRIC LAYER; FERROELECTRIC RELAXORS; GATE INSULATOR; GATE VOLTAGES; HIGH DIELECTRIC CONSTANTS; ON/OFF RATIO; ORGANIC THIN FILM TRANSISTORS; PENTACENES; RELAXORS; REMNANT POLARIZATIONS; SEMICONDUCTOR LAYERS; SOLUTION PROCESSABLE;

DIELECTRIC MATERIALS; ELECTRIC CHARGE; GATE DIELECTRICS; THIN FILM TRANSISTORS;

FERROELECTRICITY;

EID: 84872279202     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773186     Document Type: Article

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