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Volumn 96, Issue 1, 2013, Pages 218-222

Semiconductor-insulator transition in undoped rutile, TiO 2, ceramics

Author keywords

[No Author keywords available]

Indexed keywords

COOLING RATES; ELECTRICAL CONDUCTIVITY; IMPEDANCE ANALYSIS; OUTER LAYER; OXYGEN CONTENT; REDUCING ATMOSPHERE; SAMPLE PROCESSING; SEMICONDUCTOR-INSULATOR TRANSITION; SLOW COOLED; SUBSEQUENT COOLING; TEMPERATURE RANGE; TIO;

EID: 84872115608     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/jace.12025     Document Type: Article
Times cited : (24)

References (15)
  • 1
    • 34547486889 scopus 로고    scopus 로고
    • Titanium Dioxide Nanomaterials:Synthesis, Properties, Modifications, and Applications
    • X. Chen, and, S. S. Mao, " Titanium Dioxide Nanomaterials:Synthesis, Properties, Modifications, and Applications," Chem. Rev., 107 [ 7 ] 2891-959 (2007).
    • (2007) Chem. Rev. , vol.107 , Issue.7 , pp. 2891-2959
    • Chen, X.1    Mao, S.S.2
  • 2
    • 4544235448 scopus 로고
    • 2 Surfaces: Principles, Mechanisms, and Selected Results
    • 2 Surfaces: Principles, Mechanisms, and Selected Results," Chem. Rev., 95 [ 3 ] 735-58 (1995).
    • (1995) Chem. Rev. , vol.95 , Issue.3 , pp. 735-758
    • Linsebigler, A.L.1    Lu, G.2    Yates, J.T.3
  • 4
    • 38849099044 scopus 로고    scopus 로고
    • Electrical Properties of Niobium-Doped Titanium Dioxide. 3. Thermoelectric Power
    • L. R. Sheppard, T. Bak, and, J. Nowotny, " Electrical Properties of Niobium-Doped Titanium Dioxide. 3. Thermoelectric Power," J. Phys. Chem. C, 112 [ 2 ] 611-7 (2007).
    • (2007) J. Phys. Chem. C , vol.112 , Issue.2 , pp. 611-617
    • Sheppard, L.R.1    Bak, T.2    Nowotny, J.3
  • 6
    • 49949137362 scopus 로고
    • Note on the Defect Structure of Rutile
    • P. Kofstad, " Note on the Defect Structure of Rutile," J. Less Common Metals, 13, 635-8 (1967).
    • (1967) J. Less Common Metals , vol.13 , pp. 635-638
    • Kofstad, P.1
  • 8
    • 0037879434 scopus 로고    scopus 로고
    • Defect Chemistry and Semiconducting Properties of Titanium Dioxide: I. Intrinsic Electronic Equilibrium
    • "II. Defect diagrams" 1057-1067; "III. Mobility of electronic charge carriers" 1069-1087.
    • T. Bak, J. Nowotny, M. Rekas, and, C. C. Sorrell, " Defect Chemistry and Semiconducting Properties of Titanium Dioxide: I. Intrinsic Electronic Equilibrium," J. Phys. Chem. Sol., 64 [ 7 ] 1043-56, "II. Defect diagrams" 1057-1067; "III. Mobility of electronic charge carriers" 1069-1087 (2003).
    • (2003) J. Phys. Chem. Sol. , vol.64 , Issue.7 , pp. 1043-1056
    • Bak, T.1    Nowotny, J.2    Rekas, M.3    Sorrell, C.C.4
  • 10
    • 0000332457 scopus 로고
    • Crystallographic Shear in Oxygen-Deficient Rutile: An Electron Microscope Study
    • J. S. Anderson, and, R. J. D. Tilley, " Crystallographic Shear in Oxygen-Deficient Rutile: An Electron Microscope Study," J. Solid State Chem., 2 [ 3 ] 472-82 (1970).
    • (1970) J. Solid State Chem. , vol.2 , Issue.3 , pp. 472-482
    • Anderson, J.S.1    Tilley, R.J.D.2
  • 12
    • 79952002742 scopus 로고    scopus 로고
    • Oxygen Surface Exchange Kinetics of Erbia-Stabilized Bismuth Oxide
    • C. Y. Yoo, B. Boukamp, and, H. Bouwmeester, " Oxygen Surface Exchange Kinetics of Erbia-Stabilized Bismuth Oxide," J. Solid State Electrochem., 15 [ 2 ] 231-6 (2011).
    • (2011) J. Solid State Electrochem. , vol.15 , Issue.2 , pp. 231-236
    • Yoo, C.Y.1    Boukamp, B.2    Bouwmeester, H.3
  • 13
    • 76049117447 scopus 로고    scopus 로고
    • Voltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn Ceramics
    • H. Beltrán, M. Prades, N. Masõ, E. Cordoncillo, and, A. R. West, " Voltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn Ceramics," J. Am. Ceram. Soc., 93 [ 2 ] 500-5 (2010).
    • (2010) J. Am. Ceram. Soc. , vol.93 , Issue.2 , pp. 500-505
    • Beltrán, H.1    Prades, M.2    Masõ, N.3    Cordoncillo, E.4    West, A.R.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.