In situ control of electronic phase separation in La1/8 Pr 4/8Ca3/8MnO3/PNM-PT thin films using ferroelectric-poling-induced strain

Journal of Applied Physics

Volumn 113, Issue 1, 2013, Pages

  Zhang, T ^a   Wei, Q ^a   Zheng, R K ^b   Wang, X P ^a   Fang, Q F ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETICS; CHARGE ORDERING TRANSITION; CHARGE-ORDERING PHASE TRANSITION; COEXISTING PHASIS; ELECTRONIC PHASE SEPARATION; EPITAXIALLY GROWN; IN-SITU CONTROL; OUT-OF PLANE; PARAMAGNETIC PHASIS; POLING STATE; SINGLE-CRYSTAL SUBSTRATES; STRAIN-INDUCED CHANGE; TRANSPORT AND MAGNETIC PROPERTIES;

ANTIFERROMAGNETISM; LEAD; MAGNETIC PROPERTIES; MANGANESE OXIDE; PARAMAGNETISM; PHASE SEPARATION; SUBSTRATES; THIN FILMS;

FERROELECTRICITY;

EID: 84872087074     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772673     Document Type: Article

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