Nano-flower and nano-wall SnS2 films fabricated with controllable shape and size by the PECVD method

Semiconductor Science and Technology

Volumn 28, Issue 1, 2013, Pages

  Cheng, L L ^a   Liu, M H ^a   Wang, S C ^a   Wang, M X ^a   Wang, G D ^a   Zhou, Q Y ^a   Chen, Z Q ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b ANHUI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; BUILDING BLOCKES; CHEMICAL COMPOSITIONS; DEPOSITION PARAMETERS; DEPOSITION TEMPERATURES; FORMATION MECHANISM; GROWING SURFACES; MOLAR RATIO; SHAPE AND SIZE; SOLID SOURCES; SOURCE MATERIAL; SULFUR RADICALS; SULFUR SOURCE;

CRYSTAL GROWTH; DEPOSITS; MORPHOLOGY; NANOFLOWERS; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SULFUR; WALLS (STRUCTURAL PARTITIONS);

FILMS;

EID: 84872085260     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/1/015020     Document Type: Article

References (26)

1. Lin Y T, Shi J B, Chen Y C, Chen C J and Wu P F 2009 Nanoscale Res. Lett. 4 694
2. Polarz S, Smarsly B, Goltner C and Antonietti M 2000 Adv. Mater. 12 1499
3. Manasevit H M and Simpson W I 1975 J. Electrochem. Soc. 122 444
4. Nebesny K W, Collins G E, Lee P A, Chau L K, Danziger J, Osburn E and Armstrong N R 1991 Chem. Mater. 3 829
5. Lopez S and Ortiz A 1994 Semicond. Sci. Technol. 9 2130
6. Shibata T, Miura T, Kishi T and Nagai T 1990 J. Cryst. Growth 106 593
7. Sankapal B R, Mane R S and Lokhande C D 2000 Mater. Res. Bull. 35 2027 (Pubitemid 32875270)
8. Sánchez-Juárez A, Tiburcio-Silver A and Ortiz A 2005 Thin Solid Films 480-481 452-6 (Pubitemid 40643021)
9. Lokhande C D 1990 J. Phys. D: Appl. Phys. 23 1703
10. Yang Q, Tang K B, Wang C R, Zhang D Y and Qian Y T 2002 J. Solid State Chem. 164 106
11. Hong S Y, Popovitz-Biro R, Prior Y and Tenne R 2003 J. Am. Chem. Soc. 125 10470 (Pubitemid 37022256)
12. Radovsky G, Popovitz-Biro R, Staiger M, Gartsman K, Thomsen C, Lorenz T, Seifert G and Tenne R 2011 Angew. Chem. 123 12524
13. Ma J M, Lei D N, Duan X C, Li Q H, Wang T H, Cao A M, Mao Y H and Zheng W J 2012 RSC Adv. 2 3615
14. Ma J M, Lei D N, Mei L, Duan X C, Li Q H, Wang T H and Zheng W J 2012 CrystEngCommun 14 832
15. Zai J T, Qian X F, Wang K X, Yu C, Tao L Q, Xiao Y L and Chen J S 2012 CrystEngCommun 14 1364
16. Wang Y, Gong H, Fan B H and Hu G X 2010 J. Phys. Chem. C 114 3256
17. Hibbert T G, Mahon M F, Molloy K C, Price L S and Parkin I P 2011 J. Mater. Chem. 11 469
18. Lucovsky G, Mikkelson J C J, Liang W Y, White R M and Martin R M 1976 Phys. Rev. B 14 1663
19. Panda S K, Antonakos A, Liarokapis E, Bhattacharya S and Chaudhuri S 2007 Mater. Res. Bull. 42 576 (Pubitemid 46275790)
20. Abello L, Bochu B, Gaskov A, Koudryavtseva S, Jucazeau G and Roumyantseva M 1998 J. Solid State Chem. 135 78
21. Wu G S, Wang J P, Thomas D F and Chen A C 2008 Langmuir 24 3503 (Pubitemid 351549198)
22. Ning J J, Men K K, Xiao G J, Wang L, Dai Q Q, Zou B, Liu B B and Zou G T 2010 Nanoscale 2 1699
23. Ramakrishna Reddy K T, Sreedevia G, Ramyaa K and Milesb R W 2012 Energy Procedia 15 340
24. Lifshitz E, Chen Z and Bykov L 1993 J. Phys. Chem. 97 238
25. Abass A K, Majeid K J and Jassim H A 1986 Solid State Commun. 57 805 (Pubitemid 16523949)
26. Chakrabarti A, Lu J, McNamara A M, Kuta L M, Stanley S M, Xiao Z L, Maguire J A and Hosmane N S 2011 Inorganica Chimica Acta 374 627