Rear-surface passivation technology for crystalline silicon solar cells: A versatile process for mass production

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 125-130

  Gassenbauer, Y ^a   Ramspeck, K ^a   Bethmann, B ^a   Dressler, K ^a   Moschner, J D ^a   Fiedler, M ^a   Brouwer, E ^a   Drossler R ^a   Lenck, N ^a   Heyer, F ^a   Feldhaus, M ^a   Seidl, A ^b   Muller M ^b   Metz, A ^a  

^a SCHOTT Solar AG   (Germany)

^b Schott Solar Wafer GmbH   (Germany)

Author keywords

Dielectric films; manufacturing processes; photovoltaic cells; silicon

Indexed keywords

BACK-SURFACE FIELD; CELL EFFICIENCY; CELL STRUCTURE; CRYSTALLINE SILICON SOLAR CELLS; CZOCHRALSKI WAFERS; DIELECTRIC PASSIVATION; ECONOMIC EFFICIENCY; EFFICIENCY GAIN; HIGH-PERFORMANCE CELL; MANUFACTURING PROCESS; MASS PRODUCTION; MONOCRYSTALLINE MATERIALS; MULTICRYSTALLINE; REAR SIDE; SELECTIVE EMITTERS; WAFER MATERIAL; WAFER THICKNESS;

ALUMINUM; DIELECTRIC FILMS; EFFICIENCY; MACHINE TOOLS; PASSIVATION; PHOTOVOLTAIC CELLS; PRODUCTION ENGINEERING; SILICON; SILICON SOLAR CELLS;

SILICON WAFERS;

EID: 84871734555     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2211338     Document Type: Article

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