Improvement of thermoelectric properties through controlling the carrier concentration of AgPb18SbTe20 alloys by Sb addition

Electronic Materials Letters

Volumn 8, Issue 6, 2012, Pages 659-663

  Lee, J K ^a,b   Oh, M W ^a   Park, S D ^a   Kim, B S ^a   Min, B K ^a   Kim, M H ^b   Lee, H W ^a  

^a Korea Electrotechnology Research Institute (KERI)   (South Korea)

^b Changwon National University   (South Korea)

Author keywords

AgPb18SbTe20 (LAST); carrier concentration; PbTe; thermoelectric materials; thermoelectric properties

Indexed keywords

AGPB18SBTE20 (LAST); DIMENSIONLESS FIGURE OF MERIT; DONOR ELEMENTS; ELECTRICAL RESISTIVITY; HALL MEASUREMENTS; PBTE; SOLUBILITY LIMITS; TEMPERATURE RANGE; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; XRD;

ANTIMONY; ANTIMONY COMPOUNDS; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; THERMOELECTRIC EQUIPMENT;

THERMOELECTRICITY;

EID: 84871658037     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-012-2207-7     Document Type: Article

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