Photoluminescence characteristics of Dy3+ doped Y3Ga5O12 phosphors for white light emitting diodes

Materials Express

Volumn 2, Issue 2, 2012, Pages 145-150

  Sun, Chengli ^a,b   Tu, Chaoyang ^a  

^a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Dy3+ Doped; Luminescence properties; White emission; WLED; Y3Ga5O12 Phosphors

Indexed keywords

EID: 84871571784     PISSN: 21585849     EISSN: 21585857     Source Type: Journal    
DOI: 10.1166/mex.2012.1062     Document Type: Article

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