Nanotwinning and structural phase transition in CdS quantum dots

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages 1-7

  Kumar, Pragati ^a   Saxena, Nupur ^b   Chandra, Ramesh ^c   Gua, Vinay ^d   Agarwal, Avinash ^a   Kanjilal, Dinakar ^b  

^a BAREILLY COLLEGE   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^c INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

^d UNIVERSITY OF DELHI   (India)

Author keywords

CdS quantum dots; CdS thin films; Phase transition; Photoluminescence; Pulsed laser deposition; Raman scattering

Indexed keywords

ANNEALING; CADMIUM SULFIDE; ELECTRON-PHONON INTERACTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; LASER ABLATION; NANOCRYSTALLINE SILICON; NANOCRYSTALS; PARTICLE SIZE; PHASE TRANSITIONS; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); PULSED LASER DEPOSITION; PULSED LASERS; QUANTUM DOT LASERS; RAMAN SCATTERING; SEMICONDUCTOR QUANTUM DOTS; THIN FILMS;

ANNEALING TEMPERATURES; AVERAGE PARTICLE SIZE; CDS QUANTUM DOTS; CDS THIN FILMS; CHEMICAL COPRECIPITATION METHOD; GLANCING ANGLE X-RAY DIFFRACTIONS; STRUCTURAL PHASE TRANSITION; THERMAL-ANNEALING;

SULFUR COMPOUNDS;

EID: 84871020704     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-584     Document Type: Article

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