Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt

Nano Letters

Volumn 12, Issue 12, 2012, Pages 6420-6427

  Zhang, Qing ^a   Liu, Xinfeng ^a   Utama, Muhammad Iqbal Bakti ^a   Zhang, Jun ^a   De La Mata, María ^b   Arbiol, Jordi ^b,c   Lu, Yunhao ^d   Sum, Tze Chien ^a   Xiong, Qihua ^a,e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^c INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

^d ZHEJIANG UNIVERSITY   (China)

^e NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

electron phonon coupling; exciton dynamics; photoluminescence; resonant Raman spectroscopy; ZnTe nanobelts

Indexed keywords

AMPLIFIED SPONTANEOUS EMISSIONS; COMPREHENSIVE STUDIES; ELECTRON HOLE PLASMA; ELECTRON PHONON COUPLINGS; ELECTRON-PHONON COUPLING STRENGTHS; EMISSION PROCESS; EXCITATION POWER; EXCITON DYNAMICS; EXCITON RECOMBINATION; FREE EXCITONS; LIGHT HOLES; LONGITUDINAL OPTICAL PHONONS; PHOTOLUMINESCENCE DECAY CURVES; PICOSECONDS; RADIATIVE DECAY CHANNELS; RELAXATION RATES; RESONANT RAMAN SPECTROSCOPY; RRS SPECTRA; SEMICONDUCTOR NANOSTRUCTURES; TEMPERATURE DEPENDENT; TIME CONSTANTS; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

DYNAMICS; ELECTRON CORRELATIONS; ELECTRON-PHONON INTERACTIONS; EXCITONS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; RAMAN SPECTROSCOPY; ZINC COMPOUNDS;

NANOBELTS;

EID: 84870954206     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3037867     Document Type: Article

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