Three-level driving method for GaN power transistor in synchronous buck converter

2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

Volumn , Issue , 2012, Pages 2949-2953

  Ren, Xiaoyong ^a   Reusch, David ^b   Ji, Shu ^b   Zhang, Zhiliang ^a   Mu, Mingkai ^b   Lee, Fred C ^b  

^a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

Driving method; Gallium Nitride (GaN); Three level

Indexed keywords

DEVICE CHARACTERISTICS; DRIVING METHOD; EFFICIENCY IMPROVEMENT; FULL-LOAD; HIGHER EFFICIENCY; POWER TRANSISTORS; REVERSE CONDUCTION; SILICON MOSFET; SWITCHING APPLICATIONS; SYNCHRONOUS BUCK CONVERTER; THREE-LEVEL;

DC-DC CONVERTERS; ENERGY CONVERSION; EXHIBITIONS; POWER ELECTRONICS; TRANSISTORS;

GALLIUM NITRIDE;

EID: 84870914118     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2012.6342521     Document Type: Conference Paper

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