300A 650V 70 um thin IGBTs with double-sided cooling

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 320-323

  Chang, Hsueh Rong ^a   Bu, Jiankang ^a   Kong, George ^a   Labayen, Ricky ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING VOLTAGE; CURRENT CARRYING CAPABILITY; CURRENT RATING; DOUBLE-SIDED COOLING; HEAT EXCHANGE; ON-STATE VOLTAGE DROP; THIN WAFERS; ULTRA-THIN;

EID: 84870892631     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890855     Document Type: Conference Paper

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4. "Power EV-HEV 2010-power electronics in Electric and Hybrid Cars," Yole development, France, 2009.
5. T. Laska, et al, "Short Circuit Properties of the trench/Field-Stop-IGBTs-Design Aspects for a Superior Robustness', Proc. ISPSD'03, 2003.
6. T. Laska, M. Matschitsch, W. Scholz, "Ultra thin-wafer technology for a new 600 V-NPT-IGBT", ISPSD '97.