Morphology and structural properties of a-Si:H and a-SiC:H films controlled in nanoscale

Journal of Nanoelectronics and Optoelectronics

Volumn 7, Issue 6, 2012, Pages 619-622

  Manakov, S M ^a   Taurbayev, T I ^a  

^a AL FARABI KAZAKH NATIONAL UNIVERSITY   (Kazakhstan)

Author keywords

Amorphous Hydrogenated Silicon; Atomic Force Microscopy; Hydrogenated Amorphous Silicon Carbide; Optical Gap; Raman Spectra

Indexed keywords

A-SI:H; A-SIC:H; AMORPHOUS NETWORKS; CARBON CONTENT; EFFECTIVE SIZE; FILM SURFACES; FILMS PROPERTIES; HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED SILICON; LOW CARBON; NANO SCALE; NANOROUGHNESS; OPTICAL GAP; RAMAN SCATTERING SPECTRA;

AMORPHOUS CARBON; AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CARBON FILMS; CHEMICAL BONDS; HYDROGENATION; MORPHOLOGY; NANOTECHNOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON; SILICON CARBIDE;

AMORPHOUS SILICON;

EID: 84870834326     PISSN: 1555130X     EISSN: 15551318     Source Type: Journal    
DOI: 10.1166/jno.2012.1402     Document Type: Article

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