Effects of Cu/In ratio and annealing temperature on physical properties of dip-coated CuInS2 thin films

Materials Science in Semiconductor Processing

Volumn 16, Issue 1, 2013, Pages 138-142

  Aslan, F ^a   Zarbali, M Z ^a,b   Yesilata, B ^a   Mutlu, I H ^a  

^a HARRAN UNIVERSITY   (Turkey)

^b INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

CuInS2; Sol gel method; Solar Cells; Thin films

Indexed keywords

ANNEALING TEMPERATURES; ARGON ENVIRONMENT; CUINS2; ENERGY DISPERSIVE X-RAY SPECTROMETERS; GLASS SUBSTRATES; POLYCRYSTALLINE; SOL-GEL DIP-COATING METHOD; XRD;

SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOLAR CELLS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84870446445     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.05.015     Document Type: Article

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