Electro-optical performances of p-on-n and n-on-p silicon photomultipliers

IEEE Transactions on Electron Devices

Volumn 59, Issue 12, 2012, Pages 3419-3425

  Mazzillo, Massimo ^a   Ronzhin, Anatoly ^b   Los, Sergey ^b   Abbisso, Salvatore ^a   Sanfilippo, Delfo ^a   Valvo, Giusy ^a   Carbone, Beatrice ^a   Piana, Angelo ^a   Fallica, Giorgio ^a   Albrow, Michael ^b   Ramberg, Erik ^b  

^a STMICROELECTRONICS   (Italy)

^b FERMI NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

Cross talk; p on n and n on p junctions; photon detection efficiency (PDE); silicon photomultipliers (SiPMs); timing jitter

Indexed keywords

EMISSION SPECTROSCOPY; PHOTOMULTIPLIERS; POSITRON EMISSION TOMOGRAPHY; SCINTILLATION COUNTERS; TIMING JITTER;

BLUE WAVELENGTH; ELECTRO-OPTICAL PERFORMANCE; EMISSION SPECTRUMS; PHOTON DETECTION EFFICIENCY; SILICON PHOTOMULTIPLIER; STMICROELECTRONICS;

SILICON;

EID: 84870301063     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2218250     Document Type: Article

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