Quantum detection efficiency in geiger mode avalanche photodiodes

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 3620-3625

  Mazzillo, Massimo ^a   Piazza, Alessandro ^a   Condorelli, Giovanni ^a   Sanfilippo, Delfo ^a   Fallica, Giorgio ^a   Billotta, Sergio ^b   Belluso, Massimiliano ^b   Bonanno, Giovanni ^b   Cosentino, Luigi ^c   Pappalardo, Alfio ^c   Finocchiaro, Paolo ^c  

^a STMICROELECTRONICS   (Italy)

^b INAF OSSERVATORIO ASTROFISICO DI CATANIA   (Italy)

^c INFN SEZIONE DI CATANIA   (Italy)

Author keywords

Avalanche triggering probability; Dead layer; Geiger mode avalanche photodiode; Quantum detection efficiency; Silicon photomultiplier

Indexed keywords

AVALANCHE PHOTODIODES; AVALANCHES (SNOWSLIDES); HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTODIODES; PHOTOMULTIPLIERS; SNOW;

AVALANCHE TRIGGERING PROBABILITY; DEAD LAYER; GEIGER MODE AVALANCHE PHOTODIODE; QUANTUM DETECTION EFFICIENCY; SILICON PHOTOMULTIPLIER;

QUANTUM EFFICIENCY;

EID: 58849122275     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007483     Document Type: Conference Paper

References (27)

1. M. Ghioni, A. Gulinatti, I. Rech, F. Zappa, and S. Cova, "Progress in silicon single-photon avalanche diodes," IEEE J. Sci. Topics Quantum Electron., vol. 13, no. 4, pp. 852-862, Jul./Aug. 2007.
2. V. Golovin and V. Saveliev, "Novel type of avalanche detector with Geiger mode operation," Nucl. Instrum. Methods Phys. Res A, vol. A518, pp. 560-564, 2004.
3. 2 silicon photomultiplier," IEEE J. Qantum Electron., vol. 44, no. 2, pp. 157-163, 2008.
4. B. Dolgoshein et al., "Status report on silicon photomultiplier development and its applications," Nucl. Instrum. Methods Phys. Res A, vol. A563, pp. 368-376, 2006.
5. I. Britvitch, E. Lorenz, A. Olshevski, D. Renker, Z. Sadygov, R. Scheuermann, A. Stoykov, A. Werner, and I. Zheleznykh, "Study of avalanche microchannel photodiodes for use in scintillation detectors," Nucl. Instrum. Methods Phys. Res A, vol. A571, pp. 317-320, 2007.
6. M. Mazzillo et al., "Silicon photomultipliers for nuclear medical imaging applications," Proc. SPIE Optical Sensors, vol. 7003, p. 700301, 2008.
7. C. L. Melcher and J. S. Schweitzer, "Cerium-doped lutetium oxyorthosilicate: A fast efficient new scintillator," IEEE Trans. Nucl. Sci., vol. 39, no. 4, pp. 502-505, Aug. 1992.
8. G. Bondarenko et al., "Limited Geiger microcell silicon photodiode," Nucl. Instrum. Methods Phys. Res A, vol. A442, pp. 187-192, 2000.
9. M. Mazzillo et al., "Single photon avalanche photodiodes arrays," Sens. Actuators A, vol. 138, pp. 306-312, 2007.
10. E. Sciacca et al., "Arrays of Geiger mode avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 18, pp. 1633-1635, 2006.
11. F. Zappa, S. Tisa, A. Tosi, and S. Cova, "Principles and features of single-photon avalanche diode arrays," Sens. Actuators A, vol. 140, pp. 103-112, 2007.
12. S. M. Sze, Semiconductor Devices Physics and Technology. New York: Wiley, 1985.
13. W. G. Oldham, R. R. Samuelson, and P. Antognetti, "Triggering phenomena in avalanche diodes," IEEE Trans. Electron Devices, vol. ED-19, pp. 1056-1060, 1972.
14. W. J. Kindt, "Geiger Mode Avalanche Photodiode Arrays for Spatially Resolved Single Photon Counting," Ph. D. dissertation, Delft Univ., Delft, The Netherlands, 1999.
15. R. VanOverstraeten and H. De Man, "Measurement of the ionization rates in diffused silicon p-n junctions," Solid State Electron., vol. 13, pp. 583-608, 1970.
16. [Online]. Available: http://www.silvaco.com.
17. E. Sciacca, G. Condorelli, S. Aurite, S. Lombardo, M. Mazzillo, D. Sanfilippo, G. Fallica, and E. Rimini, "Crosstalk characterization in Geiger mode avalanche photodiode arrays," IEEE Electron Device Lett. vol. 29, no. 3, pp. 218-220, 2008.
18. J. A. Del Alamo and R. M. Swanson, "Modeling of minority carrier transport in heavily doped silicon emitters," Solid State Electron., vol. 30, no. 11, pp. 1127-1136, 1987.
19. M. S. Tyagi and R. VanOverstraeten, "Minority carrier recombination in heavily doped silicon," Solid State Electron., vol. 26, no. 6, pp. 577-597, 1983.
20. E. Sciacca et al., "Silicon planar technology for single-photon optical detectors," IEEE Trans. Electron Devices, vol. 50, pp. 918-925, 2003.
21. M. Belluso, G. Bonanno, S. Billotta, A. Call, S. Scuderi, M. Mazzillo, G. Fallica, D. Sanfilippo, E. Sciacca, and S. Lombardo, "Electro-optical characteristics of the single photon avalanche diode (SPAD)," in Scientific Detectors for Astronomy 2005. Thousand Oaks, CA: Rockwell Scientific, 2006, pp. 461-468.
22. S. Cova, M. Ghioni, A. Lacaita, C. Samori, and F. Zappa, "Avalanche photodiodes and quenching circuits for single-photon detection," Appl. Opt., vol. 35, no. 12, pp. 1956-1976, 1996.
23. A. C. Giudice, M. Ghioni, S. Cova, and F. Zappa, "A process and deep evaluation tool: Afterpulsing in avalanche junctions," in Proc. 33rd Conf. Eur. Solid-State Device Research, 2003, vol. 1, pp. 347-350.
24. [Online]. Available: http://www.keithley.com
25. E. D. Palik, Handbook of Optical Constants of Solids. New York: Academic, 1985.
26. L. Ihaddadene-Lecoq, J. Marcon, and K. Ketata, "Study of BF2 ion implantation into crystalline silicon: Influence of fluorine on boron diffusion," Mater: Res. Soc. Proc., vol. 810, p. C 8.9, 2004.
27. 2 system," Solid State Electron., vol. 15, no. 9, pp. 961-970, 1972.