High performance half-Heusler thermoelectric materials with refined grains and nanoscale precipitates

Journal of Materials Research

Volumn 27, Issue 19, 2012, Pages 2457-2465

  Yu, Cui ^a,b   Xie, Hanhui ^a   Fu, Chenguang ^a   Zhu, Tiejun ^a,c   Zhao, Xinbing ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b Science and Technology on ASIC Laboratory   (China)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

melt spinning; phonon scattering; thermal conductivity; thermoelectric properties; ZrNiSn

Indexed keywords

DIMENSIONLESS FIGURE OF MERIT; ELECTRICAL CONDUCTIVITY; GRAIN SIZE; HALF-HEUSLER; HALF-HEUSLER ALLOYS; LATTICE THERMAL CONDUCTIVITY; MELT-SPUN; NANO SCALE; REFINED GRAIN; SINTERED BULK; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; THIN RIBBONS; ZRNISN;

ELECTRIC CONDUCTIVITY; GRAIN SIZE AND SHAPE; HAFNIUM; MELT SPINNING; NANOTECHNOLOGY; PHONON SCATTERING; SPARK PLASMA SINTERING; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM;

THERMOELECTRICITY;

EID: 84870268428     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2012.171     Document Type: Article

References (30)

1. G.J. Snyder and E.S. Toberer: Complex thermoelectric materials. Nat. Mater. 7, 105 (2008).
2. Y.Z. Pei, A. LaLonde, S. Iwanaga, and G.J. Snyder: High thermoelectric figure of merit in heavy hole dominated PbTe. Energy Environ. Sci. 4, 2085 (2011).
3. T.J. Zhu, K. Xiao, C.Yu, J.J. Shen, S.H.Yang, A.J. Zhou,X.B. Zhao, and J. He: Effects of yttrium doping on the thermoelectric properties of Hf0.6Zr0.4NiSn0.98Sb0.02 half-Heusler alloys. J. Appl. Phys. 108, 044903 (2010).
4. C. Uher, J. Yang, S. Hu, D.T. Morelli, and G.P. Meisner: Transport properties of pure and doped MNiSn (M5Zr, Hf). Phys. Rev. B 59, 8615 (1999).
5. H. Hohl, A.P. Ramirez, C. Goldmann, G. Ernst, B. Woelfing, and E. Bucher: Efficient dopants for ZrNiSn-based thermoelectric materials. J. Phys. Condens. Matter 11, 1697 (1999).
6. S. Ogut and K.M. Robe: Band gap and stability in the ternary intermetallic compounds NiSnM (M5Ti, Zr, Hf): A first-principles study. Phys. Rev. B 51, 10443 (1995).
7. L. Chaput, J. Tobola, P. Pécheur, and H. Scherrer: Electronic structure and thermopower of Ni(Ti0.5Hf0.5)Sn and related half-Heusler phases. Phys. Rev. B 73, 045121 (2006).
8. S. Bhattacharya, T.M. Tritt, Y. Xia, V. Ponnambalam, S.J. Poon, and N. Thadhani: Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys. Appl. Phys. Lett. 81, 43 (2002). (Pubitemid 34783696)
9. S. Bhattacharya, M.J. Skove, M. Russell, T.M. Tritt, Y. Xia, V. Ponnambalam, S.J. Poon, and N. Thadhani: Effect of boundary scattering on the thermal conductivity of TiNiSn-based half-Heusler alloys. Phys. Rev. B 77, 184203 (2008).
10. J.W. Sharp, S.J. Poon, and H.J. Goldsmid: Boundary scattering and the thermoelectric figure ofmerit. Phys. Status Solidi A 187, 507 (2001).
11. Q. Shen, L. Chen, T. Goto, T. Hirai, J. Yang, G.P. Meisner, and C. Uher: Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds. Appl. Phys. Lett. 79, 4165 (2001). (Pubitemid 34023335)
12. S.R. Culp, S.J. Poon, N. Hickman, T.M. Tritt, and J. Blumm: Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C. Appl. Phys. Lett. 88, 042106 (2006).
13. C. Yu, T.J. Zhu, R.Z. Shi, Y. Zhang, X.B. Zhao, and J. He: High-performance half-Heusler thermoelectric materials Hf1-xZrxNiSn1-ySby prepared by levitation melting and spark plasma sintering, Acta Mater. 57, 2757 (2009).
14. T.J. Zhu, X.B. Zhao, and S.H. Hu: Phase transition of FeSi2 and Fe2Si5 based alloys prepared by melt spinning. J. Mater. Sci. Lett. 20, 1831 (2001).
15. M. Hasaka, T.Morimura, H. Sato, and H. Akashima: Thermoelectric properties of Tix(HfyZr1-y)1-xNiSn0.998Sb0.002 half-Heusler ribbons. J. Electron. Mater. 8, 1320 (2009).
16. C. Yu, T.J. Zhu, K. Xiao, J.J. Shen, S.H. Yang, and X.B. Zhao: Reduced grain sizes and improved thermoelectric properties in melt spun (Hf, Zr)NiSn half-Heusler alloys. J. Electron. Mater. 39, 2008 (2010).
17. C. Yu, T.J. Zhu, K. Xiao, J.J. Shen, and X.B. Zhao: Microstructure and thermoelectric properties of (Zr, Hf)NiSn-based half-Heusler alloys by melt spinning and spark plasma sintering. Funct. Mater. Lett. 3, 4 (2010).
18. C. Yu, T.J. Zhu, S.H. Yang, J.J. Shen, and X.B. Zhao: Preparation and thermoelectric properties of polycrystalline nonstoichiometric Yb14MnSb11 Zintl compounds. Phys. Status Solidi RRL 4, 212 (2010).
19. J.W. Vandersande, A. Zoltan, and C. Wood: Accurate determination of specific heat at high temperatures using the flash diffusivity method. Int. J. Thermophys. 10, 251 (1989).
20. Y. Kimura, T. Tanoguchi, and T. Kita: Vacancy site occupation by Coand Ir in half-HeuslerZrNiSn and conversion of the thermoelectric properties from n-Type to p-Type. Acta Mater. 58, 4354 (2010).
21. K. Gofryk, D. Kaczorowski, T. Plackowski, J. Mucha, A. Leithe-Jasper, W. Schnelle, and Y. Grin: Magnetic, transport, and thermal properties of the half-Heusler compounds ErPdSb and YPdSb. Phys. Rev. B 75, 224426 (2007).
22. Y. Kimura, H. Ueno, and Y. Mishima: Thermoelectric properties of directionally solidified half-Heusler (Ma 0.5, Mb 0.5)NiSn (Ma, Mb 5 Hf, Zr, Ti) alloys. J. Electron. Mater. 38, 934 (2009).
23. J. He, D. Hitchcock, I. Bredeson, N. Hickman, T.M. Tritt, and S.N. Zhang: Probing lattice dynamics of Cd2Re2O7 pyrochlore: Thermal transport and thermodynamics study. Phys. Rev. B 81, 134302 (2010).
24. D.G. Cahill, S.K. Watson, and R.O. Pohl: Lower limit to the thermal conductivity of disordered crystals, Phys. Rev. B 46, 6131 (1992).
25. J.F. Berret and M. Meissner: How universal are the low temperature acoustic properties of glasses? Z. Phys. B: Condens. Matter 70, 65 (1988).
26. J.Yang, D.T.Morelli,G.P.Meisner,W. Chen, J.S.Dyck, andC.Uher: Influence of electron-phonon interaction on the lattice thermal conductivity of Co1-xNixSb3. Phys. Rev. B 65, 094115 (2002).
27. M.B. Tang and J.T. Zhao: Low temperature transport and thermal properties of half-Heusler alloy Zr0.25Hf0.25Ti0.5NiSn. J. Alloys Compd. 475, 5 (2009).
28. P.F. Qiu, J. Yang, X.Y. Huang, X.H. Chen, and L.D. Chen: Enhanced thermoelectric performance by the combination of alloying and doping in TiCoSb-based half-Heusler compounds. Appl. Phys. Lett. 96, 152105 (2010).
29. W. Kim, J. Zide, A. Gossard, D. Klenov, S. Stemmer, A. Shakouri, and A. Majumdar: Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors. Phys. Rev. Lett. 96, 045901 (2006).
30. Y. Kawaharada, H. Uneda, H.Muta, K. Kurosaki, and S. Yamanaka: High temperature thermoelectric properties of CoN1-xMxSn half-Heusler compounds. J. Alloys Compd. 64, 59 (2004).