The development of high performance SnO2: F as TCOs for thin film silicon solar cells

Surface and Coatings Technology

Volumn 213, Issue , 2012, Pages 167-174

  Yates, Heather M ^a   Evans, Philip ^a   Sheel, David W ^a   Nicolay, Sylvain ^b   Ding, Laura ^b   Ballif, Christophe ^b  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b EPFL   (Switzerland)

Author keywords

Atmospheric pressure chemical vapour deposition; Deposition temperature; Growth rate; PV; Tin oxide

Indexed keywords

A-SI:H; CHEMICAL VAPOUR DEPOSITION; COATED GLASS; CRYSTALLINITIES; DEPOSITED FILMS; DEPOSITION TEMPERATURES; DOPANT SOURCES; FAST GROWTH RATE; GROWTH PARAMETERS; GROWTH PROCESS; HALL MEASUREMENTS; HIGH QUANTUM EFFICIENCY; LOW RESISTIVITY; OPTIMISATIONS; PHOTOVOLTAIC; PV; SYSTEMATIC EXPLORATION; THIN-FILM SILICON SOLAR CELLS; TRANSPARENT CONDUCTING OXIDE;

ACETIC ACID; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; DEPOSITS; DOPING (ADDITIVES); GLASS; GROWTH RATE; NANOSTRUCTURED MATERIALS; OPTIMIZATION; SILICON SOLAR CELLS; TIN; TIN OXIDES; VAPORS;

ELECTRIC PROPERTIES;

EID: 84870241226     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2012.10.040     Document Type: Article

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