SCOPUS 정보 검색 플랫폼

Volumn 91, Issue , 2013, Pages 372-375

Quaternary semiconductor derived and formation mechanism by non-vacuum route from solvothermal nanostructures for high-performance application

(2) Chen, Lin Jer a Chuang, Yu Ju a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

Crystal structure; Nanocomposites; Semiconductors; Solar energy materials; Thin films

Indexed keywords

ABSORPTION COEFFICIENTS; COMPARATIVE EXPERIMENTS; DEVICE PARAMETERS; DIRECT BAND GAP; FILL FACTOR; FORMATION MECHANISM; HIGH PERFORMANCE APPLICATIONS; KESTERITES; NON-VACUUM; POWER CONVERSION EFFICIENCIES; QUATERNARY SEMICONDUCTORS; REACTION CONDITIONS; SINGLE JUNCTION; SOLAR ENERGY MATERIALS; SOLVOTHERMAL; SOLVOTHERMAL ROUTE; THIN-FILM SOLAR CELLS;

CONVERSION EFFICIENCY; COPPER COMPOUNDS; CRYSTAL STRUCTURE; ENERGY GAP; NANOCOMPOSITES; NANORODS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR MATERIALS; SOLAR CELLS; THIN FILMS;

NANOSTRUCTURED MATERIALS;

EID: 84870188069 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/j.matlet.2012.10.037 Document Type: Article

Times cited : (28)

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