Formation of native defects in the γ-ray detector material Cs 2 Hg6S7

Applied Physics Letters

Volumn 101, Issue 20, 2012, Pages

  Im, Jino ^a   Jin, Hosub ^a   Li, Hao ^a   Peters, John A ^b   Liu, Zhifu ^b   Wessels, Bruce W ^b   Kanatzidis, Mercouri G ^a   Freeman, Arthur J ^a,b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; BROAD APPLICATION; CHEMICAL ENVIRONMENT; DEEP-LEVELS; DETECTOR MATERIALS; FIRST-PRINCIPLES CALCULATION; LIFE-TIMES; LOW RESISTIVITY; NATIVE DEFECT;

CALCULATIONS; DEFECTS; DETECTORS; MERCURY (METAL); POINT DEFECTS;

CESIUM;

EID: 84870015405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767368     Document Type: Article

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