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Journal of Materials Chemistry

Volumn 22, Issue 48, 2012, Pages 25388-25394

Structural and defect properties of the LaPO4 and LaP 5O14-based proton conductors

(3) Phadke, Satyajit a Nino, Juan C b Islam, M Saiful c

a Massachusetts Institute of Technology (United States)

b UNIVERSITY OF FLORIDA (United States)

c University of Bath (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; COMPARATIVE STUDIES; DEFECT CHEMISTRY; DEFECT PROPERTY; DOPANT INCORPORATION; EXPERIMENTAL INVESTIGATIONS; INTRINSIC DEFECTS; LANTHANUM PHOSPHATE; LOCAL ATOMIC STRUCTURES; PROTON CONDUCTORS; PROTONIC; PROTONIC DEFECTS; SOLUTION ENERGY;

ASSOCIATION REACTIONS; BINDING ENERGY; LANTHANUM COMPOUNDS; OXYGEN VACANCIES; PROTONS;

DEFECTS;

EID: 84869994110 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm32940a Document Type: Article

Times cited : (31)

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