Defects, dopants, and protons in LaNbO4

Chemistry of Materials

Volumn 22, Issue 21, 2010, Pages 5912-5917

  Mather, Glenn C ^a   Fisher, Craig A J ^b,c   Islam, M Saiful ^b  

^a INSTITUTO DE CERÁMICA Y VIDRIO   (Spain)

^b University of Bath   (United Kingdom)

^c JAPAN FINE CERAMICS CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMMONLY USED; DEFECT CLUSTERING; DEFECT FORMATION; DIVALENT DOPANTS; HIGH TEMPERATURE PROTON CONDUCTOR; INTERATOMIC POTENTIAL MODELS; LOCAL RELAXATION; SCHEELITE-TYPE STRUCTURE; SIMULATION METHODS; SOLUTION ENERGY;

BINDING ENERGY; CHEMICAL SENSORS; DEFECTS; OXYGEN; OXYGEN VACANCIES; PROTONS; TUNGSTATE MINERALS;

DOPING (ADDITIVES);

EID: 78149264287     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm1018822     Document Type: Article

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