Growth mechanism of anodic tantalum pentoxide formed in phosphoric acid

Electrochimica Acta

Volumn 87, Issue , 2013, Pages 82-91

  Sloppy, J D ^a,b   Lu, Z ^a,c   Dickey, E C ^a   MacDonald, D D ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Drexel University   (United States)

^c FORD MOTOR COMPANY   (United States)

Author keywords

Anodization; Electrochemical impedance spectroscopy; Point defect model; Tantalum oxide

Indexed keywords

ANODIZATIONS; BI-LAYER; BI-LAYER STRUCTURE; DEFECT CHEMISTRY; DEFECT REACTIONS; ELECTRICAL ANALOG; FARADAIC IMPEDANCE; GROWTH MECHANISMS; INNER LAYER; INTERSTITIALS; METAL/OXIDE INTERFACE; OUTER LAYER; OXIDE THICKNESS; POINT DEFECT MODEL (PDM); TANTALUM PENTOXIDE;

ANODIC OXIDATION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; OXYGEN VACANCIES; PASSIVATION; PHOSPHORIC ACID; POINT DEFECTS; SPECTROSCOPY; TANTALUM;

TANTALUM OXIDES;

EID: 84869878681     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2012.08.014     Document Type: Article

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