Effect of high temperature annealing on defects and optical properties of ZnO single crystals

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 11, 2012, Pages 2126-2130

  Jiang, M ^a   Wang, D D ^a   Zou, B ^a   Chen, Z Q ^a   Kawasuso, A ^b   Sekiguchi, T ^c  

^a WUHAN UNIVERSITY   (China)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

annealing; cathodoluminescence; point defects; positron annihilation; ZnO

Indexed keywords

ANNEALED SAMPLES; GREEN EMISSIONS; HIGH TEMPERATURE; HIGH-TEMPERATURE ANNEALING; POSITRON LIFETIME; POSITRON LIFETIME MEASUREMENTS; TEMPERATURE DEPENDENCE; UV- AND; VACANCY-RELATED DEFECTS; ZNO; ZNO SINGLE CRYSTALS;

CATHODOLUMINESCENCE; DEFECTS; ELECTRONS; OPTICAL PROPERTIES; POINT DEFECTS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; ZINC OXIDE;

ANNEALING;

EID: 84869750640     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127527     Document Type: Article

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