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Volumn , Issue , 2011, Pages 003703-003706

Monolithically integrated thin film III-V/Si solar panel on wafer for active power management

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE POWER; BYPASS DIODES; DUAL JUNCTION SOLAR CELL; ILLUMINATION CONDITIONS; IMPROVED RELIABILITY; INTEGRATION LEVELS; MAXIMUM POWER OUTPUT; MONOLITHICALLY INTEGRATED; ON-WAFER; OUTPUT VOLTAGES; POWER PROFILE; PV ARRAYS; SOLAR PANELS; SOLAR SPECTRUM; SPECIFIC POWER; SYSTEM COSTS; TIME VARYING; WAFER LEVEL;

EID: 84861089115     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6185955     Document Type: Conference Paper
Times cited : (14)

References (2)
  • 1
    • 17644381252 scopus 로고    scopus 로고
    • Theoretical analysis of the optimum energy band gap of semiconductors for fabrication of solar cells for applications in higher latitude locations
    • T. Zdanowicz et al., "Theoretical analysis of the optimum energy band gap of semiconductors for fabrication of solar cells for applications in higher latitude locations", Solar Energy Materials & Solar Cells, 87, 2005 pp. 757-769.
    • (2005) Solar Energy Materials & Solar Cells , vol.87 , pp. 757-769
    • Zdanowicz, T.1
  • 2
    • 0023289670 scopus 로고
    • The Spectral p-n Junction Model for Tandem Solar-Cell Design
    • ED-34
    • E. Nell and A. Barnett, "The Spectral p-n Junction Model for Tandem Solar-Cell Design": IEEE Trans Elect. Dev., ED-34, 2, 1987, pp 257-266.
    • (1987) IEEE Trans Elect. Dev. , vol.2 , pp. 257-266
    • Nell, E.1    Barnett, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.