Control of Ga profiles in (AgCu)(InGa)Se2 absorber layers deposited on polyimide substrates

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 662-667

  Hanket, Gregory M ^a   Thompson, Christopher P ^a   Larsen, Jes K ^a   Eser, Erten ^a   Shafarman, William N ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

copper compounds; photovoltaic cells; semiconductor device manufacture; silver; Solar power generation; thin film devices

Indexed keywords

ABSORBER LAYERS; DEPTH PROFILE; DEVICE EFFICIENCY; DEVICE PARAMETERS; GLASS SUBSTRATES; POLYIMIDE SUBSTRATE; QUANTUM EFFICIENCY MEASUREMENTS; THREE-STAGE DEPOSITION;

COPPER; COPPER COMPOUNDS; DEPOSITS; GALLIUM; PHOTOVOLTAIC CELLS; POLYIMIDES; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILVER; SOLAR POWER GENERATION; SUBSTRATES; THIN FILM DEVICES;

GALLIUM ALLOYS;

EID: 84869412267     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317696     Document Type: Conference Paper

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