|
Volumn , Issue , 2012, Pages 1014-1017
|
The effect of interface trap states on reduced base thickness a-Si/c-Si heterojunction solar cells
a a a |
Author keywords
amorphous silicon; base thickness; carrier recombination; interface traps; modeling; silicon heterojunction
|
Indexed keywords
A-SI/C-SI HETEROJUNCTIONS;
BASE THICKNESS;
CARRIER LOSS;
CARRIER RECOMBINATION;
DOMINANT PROCESS;
INTERFACE PASSIVATION;
INTERFACE TRAP STATE;
INTERFACE TRAPS;
LIGHT-TRAPPING;
RELATIVE CONTRIBUTION;
SHORT BASE;
SILICON HETEROJUNCTIONS;
SIMULATION STUDIES;
SURFACE FIELD;
AMORPHOUS SILICON;
HETEROJUNCTIONS;
MODELS;
OPEN CIRCUIT VOLTAGE;
PASSIVATION;
SILICON;
SILICON SOLAR CELLS;
INTERFACE STATES;
|
EID: 84869406784
PISSN: 01608371
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/PVSC.2012.6317774 Document Type: Conference Paper |
Times cited : (3)
|
References (13)
|