First-principles study on Cd doping in Cu 2ZnSnS 4 and Cu 2ZnSnSe 4

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

  Maeda, Tsuyoshi ^a   Nakamura, Satoshi ^a   Wada, Takahiro ^a  

^a RYUKOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CD ATOM; CDS LAYER; CHALCOPYRITE-TYPE; CHEMICAL-BATH DEPOSITION; COMPLEX IONS; DOPING ATOMS; FIRST-PRINCIPLES PSEUDOPOTENTIAL CALCULATION; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; INDIUM-FREE; NEGATIVE VALUES; P-TYPE; PHOTOVOLTAIC; PLANE-WAVE BASIS FUNCTION; POSITIVE VALUE;

ATOMS; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CALCULATIONS; CHEMICAL POTENTIAL; COPPER COMPOUNDS; SEMICONDUCTOR DOPING; TIN;

ZINC;

EID: 84869135337     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.10NC11     Document Type: Article

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