Sol-gel synthesis of Y 2O 3-doped ZnO thin films varistors and their electrical properties

Transactions of Nonferrous Metals Society of China (English Edition)

Volumn 22, Issue SUPPL. 1, 2012, Pages

  Xu, Dong ^a,b,c,d   Jiang, Bin ^a   Jiao, Lei ^a   Cui, Feng Dan ^a   Xu, Hong Xing ^a   Yang, Yong Tao ^a,e   Yu, Ren Hong ^a,e   Cheng, Xiao Nong ^a  

^a JIANGSU UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c XI'AN JIAOTONG UNIVERSITY   (China)

^d UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^e Changzhou Ming Errui Ceramics Co Ltd   (China)

Author keywords

electrical properties; film; microstructure; sol gel process; Y 2O 3 varistor; zinc oxide

Indexed keywords

DOPANT CONCENTRATIONS; DOPED ZNO THIN FILMS; GRAIN SIZE; HEXAGONAL WURTZITE STRUCTURE; MOLE FRACTION; NONLINEAR COEFFICIENT; RARE EARTH DOPED; SILICON SUBSTRATES; SOL-GEL SYNTHESIS; THRESHOLD FIELDS; V-I CHARACTERISTIC; XRD ANALYSIS; YTTRIUM ION; ZNO; ZNO THIN FILM;

FILMS; GRAIN SIZE AND SHAPE; METALLIC FILMS; MICROSTRUCTURE; OPTICAL FILMS; SOL-GEL PROCESS; VARISTORS; YTTRIUM; ZINC OXIDE; ZINC SULFIDE;

ELECTRIC PROPERTIES;

EID: 84868150310     PISSN: 10036326     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1003-6326(12)61693-8     Document Type: Article

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